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KIRIM Power Mosfet | Mosfet Application & Specification | Mosfet Characteristics

                     < KIRIM'S ENERGY SAVING !!! >

  ¢º KIRIM Power MOSFET
    This Power MOSFET is produced using planar.
     DMOS technology.
     This technology provides the highest efficient combination of fast switching,
     high ruggedness and low on-resistance.


                            


                                    ¢Ã Features

                                -. Low Switching Losses

                                -. Low Leakage Current

                                -. Very Short Recovery Time

                                -. Fast Switching Speed Stable

                                -. Operation at High Temperature

                                -. Optimized Planar-DMOS Technology

 

                        ¢Ã Advantages

                          -. High Reliability

                               -. High System Performance

                               -. High Frequency Switching

                               -. Low Switching Noise, Reduce Power Dissipation

  ¢º MOSFET Application & Specification

   -.Ballast

   -. Power Supply

   -. PFC

   -. SMPS

 ¡Ú Specification
 

MODEL

Polarity

Bvdss

(V)

Rds(ON)

VG=10V

ID@25¡É

(A)

Package

DataSheet

QRF830

N

500

1.5

4.5

TO-220

QRF840¡Ø

N

500

0.85

8.0

TO-220

QRF730

N

400

1.0

5.5

TO-220

QRF740¡Ø

N

400

0.55

10

TO-220

QRF630¡Ø

N

200

0.4

9

TO-220

 

      ¡Ø MODEL ARE UNDER DESIGN.

¢º MOS FET Characteristics

   MOS FET(Metal-Oxide-Semiconductor Field Effect Transistor)
   (The Gate Voltage controls channel inversion and Drain current.)

    ¡á Characteristics
     -.Unipolar Voltage Blocking Switch : Diode Forward Voltage(VSD)
     -.Unidirectional Current Flow Switch : Majority carrier device
     -.Voltage Controlled Current Switch : Gate Voltage controls Drain Current

   ¡á Division
     -.NMOS : n- type channel inversion
     -.PMOS : p- type channel inversion
     -.Enhancement : Positive Gate Voltage ¡æ Channel inversion
     -.Depletion : Negative Gate Voltage ¡æ Channel pinch off

   ¡á Switching Characteristics
     -.The Gate-Source Voltage controls Switch ON/OFF
     -.VGS=0 or VGS < Threshold Voltage ¡æ  ID=0  ¡æ  Switch OFF
     -.VGS > Threshold Voltage  ¡æ  ID increase  ¡æ  Switch ON

   ¡á Advantage
    -.Driving circuit design facility
    -.Small driving power
    -.Switching speed : fast  ¡æ  Low switching loss
    -.High frequency operation

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      ¡Ú ±¸ÀÔ¹®ÀÇ ÁÖ½Äȸ»ç ±â¸²¼¼¹ÌÅØ

                 ÀüÈ­ : (031) 374-5725, 375-4065
                 Æѽº : (031) 375-1946
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         ±ÛÀ» ³²°ÜÁֽðųª  (031) 374-5725·Î

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