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¢º Features

    -. Excellent coating uniformity

    -. Excellent coating hardness

    -. Long Life Time

    -. Keeping high yield in process

Breakdown Voltage

Film Thickness

¢º Specifications

    -. Dimension : Standard
        Other Customer Spec. available
    -. Material : Aluminium 6061 T6
    -. Surface Roughness :
                     Ra¡Â3a(Upper Surface)
             20a¡ÂRa¡Â35a(Otyer Surface)
    -. Anodizing Thickness :
                                   50um±2.5um


                 
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HYNIX

SAMSUNG                          

¢º Specifications

  -. Material : Silicon Single Crystal
  -. Orientation : <100>
  -. Carrier Type : P-Type(Boron Doped)
  -. Purity of Silicon  : 6N(10ppm Heavy metal
                                       contamination)
  -. Resistivity : 10 ~ 20 ohm-cm

¢º Why silicon as electrode
               in etching process
      
    -. Silicon Rich Process
    -. Good Etching Profile
    -. Protecing Over etching
    -. No(Low) Particle
    -. Long Lifetime
    -. No Arching