MOSFET Product | Quality and Reliability | Organization



KIRIM Power Mosfet | Mosfet Application & Specification | Mosfet Characteristics

                     < KIRIM'S ENERGY SAVING !!! >

  ¢º KIRIM Power MOSFET
    This Power MOSFET is produced using planar.
     DMOS technology.
     This technology provides the highest efficient combination of fast switching,
     high ruggedness and low on-resistance.


                            


                                    ¢Ã Features

                                -. Low Switching Losses

                                -. Low Leakage Current

                                -. Very Short Recovery Time

                                -. Fast Switching Speed Stable

                                -. Operation at High Temperature

                                -. Optimized Planar-DMOS Technology

 

                        ¢Ã Advantages

                          -. High Reliability

                               -. High System Performance

                               -. High Frequency Switching

                               -. Low Switching Noise, Reduce Power Dissipation

  ¢º MOSFET Application & Specification

   -.Ballast

   -. Power Supply

   -. PFC

   -. SMPS

 ¡Ú Specification
 

MODEL

Polarity

Bvdss

(V)

Rds(ON)

VG=10V

ID@25¡É

(A)

Package

DataSheet

QRF830

N

500

1.5

4.5

TO-220

QRF840¡Ø

N

500

0.85

8.0

TO-220

QRF730¡Ø

N

400

1.0

5.5

TO-220

QRF740¡Ø

N

400

0.55

10

TO-220

QRF630¡Ø

N

200

0.4

9

TO-220

 

      ¡Ø MODEL ARE UNDER DESIGN.

¢º MOS FET Characteristics

   MOS FET(Metal-Oxide-Semiconductor Field Effect Transistor)
   (The Gate Voltage controls channel inversion and Drain current.)

    ¡á Characteristics
     -.Unipolar Voltage Blocking Switch : Diode Forward Voltage(VSD)
     -.Unidirectional Current Flow Switch : Majority carrier device
     -.Voltage Controlled Current Switch : Gate Voltage controls Drain Current

   ¡á Division
     -.NMOS : n- type channel inversion
     -.PMOS : p- type channel inversion
     -.Enhancement : Positive Gate Voltage ¡æ Channel inversion
     -.Depletion : Negative Gate Voltage ¡æ Channel pinch off

   ¡á Switching Characteristics
     -.The Gate-Source Voltage controls Switch ON/OFF
     -.VGS=0 or VGS < Threshold Voltage ¡æ  ID=0  ¡æ  Switch OFF
     -.VGS > Threshold Voltage  ¡æ  ID increase  ¡æ  Switch ON

   ¡á Advantage
    -.Driving circuit design facility
    -.Small driving power
    -.Switching speed : fast  ¡æ  Low switching loss
    -.High frequency operation

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      Contact : Kirim Semitec Co., Ltd.
        Tel : 82-31-374-5725, 82-31-375-4065
        Fax : 82-31-375-1946
        E-mail : josep_lee@kirim-s.com

     If you have any question, please write us anytime
       on click here to contact the manager Jeong Sun Lee
       on the above phone number.


                 
                         Copyright(c) 2000 Kirim Semitec Co.,Ltd All Rights Reserved